Please use this identifier to cite or link to this item: http://repositorio.inesctec.pt/handle/123456789/2097
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dc.contributor.authorVítor Grade Tavaresen
dc.contributor.authorugovaen
dc.contributor.authorJelena Radi&#263en
dc.contributor.authorManuel Cândido Santosen
dc.contributor.author-Miši&#263en
dc.contributor.authoren
dc.contributor.authorCândido Duarteen
dc.contributor.authorVítor Grade Tavaresen
dc.contributor.authorAlena &#272en
dc.date.accessioned2017-11-16T13:12:43Z-
dc.date.available2017-11-16T13:12:43Z-
dc.date.issued2010en
dc.identifier.urihttp://repositorio.inesctec.pt/handle/123456789/2097-
dc.description.abstractIn this paper design of low noise amplifier (LNA) for the low frequency band, 3-5 GHz, in UMC 0.13μm CMOS technology is presented. In order to achieve good input matching common-gate topology is used. High gain with low power consumption is obtained using cascade circuit configuration. LNA shows less than -10.91 dB input return loss (S11) and less than -11.81 dB output return loss (S22), noise figure (NF) of 3.56 dB to 3.98 dB, maximum gain (S21) of 21.25 dB while dissipating 5.54 mA from 1.2 V supply. The high circuit stability parameters Kf>58.83 and B1f>0.98 are obtained.en
dc.languageengen
dc.relation4730en
dc.relation2152en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.titleAn UWB 3 - 5 GHz Common-Gate Low Noise Amplifier Designed in 0.13um Technologyen
dc.typeconferenceObjecten
dc.typePublicationen
Appears in Collections:CTM - Articles in International Conferences

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