FERROELECTRIC AND PIEZOELECTRIC PROPERTIES OF MULTILAYER COMPOSITE THIN FILMS BASED ON MPB Pb(Mg1/3Nb2/3)O3‐PbTiO3

Abstract

One of the most widely studied piezoelectric material is the (1-x)PbMg1/3Nb2/3O3-xPbTiO3 (PMNT) solid solution, near to the Morphotropic Phase Boundary (MPB).1 This is due to the ultrahigh piezoelectric activity observed in bulk materials at these compositions,2 with reported piezoelectric coefficients (d33) of  2500 pm/V. The integration of these compounds into microelectronic devices requires their fabrication in thin film form. However, a strong fall down is observed in the properties of these materials when they are deposited in the thin film form onto metalized Si-based substrates.3 Therefore, new strategies for the fabrication/architecture of relaxor-ferroelectric MPB-PMNT films should be investigated in order to enhance the remanence of the bulk properties in the device. In this work, we propose a multilayer configuration that use layers of poled ferroelectric materials with large remnant polarization (Pr), such as PbTiO3 (PT), to generate a stable internal electric field on PM