Please use this identifier to cite or link to this item: http://repositorio.inesctec.pt/handle/123456789/6412
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dc.contributor.authorBahubalindruni,Pen
dc.contributor.authorVítor Grade Tavaresen
dc.contributor.authorDe Oliveira,PGen
dc.contributor.authorBarquinha,Pen
dc.contributor.authorMartins,Ren
dc.contributor.authorFortunato,Een
dc.date.accessioned2018-01-16T15:58:29Z-
dc.date.available2018-01-16T15:58:29Z-
dc.date.issued2013en
dc.identifier.urihttp://repositorio.inesctec.pt/handle/123456789/6412-
dc.identifier.urihttp://dx.doi.org/10.1109/edssc.2013.6628203en
dc.description.abstractA high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 µm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions. © 2013 IEEE.en
dc.languageengen
dc.relation2152en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.titleHigh-gain amplifier with n-type transistorsen
dc.typeconferenceObjecten
dc.typePublicationen
Appears in Collections:CTM - Articles in International Conferences

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