InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass Bahubalindruni,PG en Vítor Grade Tavares en Borme,J en de Oliveira,PG en Martins,R en Fortunato,E en Barquinha,P en 2018-01-16T16:49:51Z 2018-01-16T16:49:51Z 2016 en
dc.description.abstract This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium-gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 degrees C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. en
dc.identifier.uri en
dc.language eng en
dc.relation 2152 en
dc.rights info:eu-repo/semantics/openAccess en
dc.title InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass en
dc.type article en
dc.type Publication en
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