Design of a High Efficiency GaN-HEMT RF Power Amplifier
Design of a High Efficiency GaN-HEMT RF Power Amplifier
| dc.contributor.author | Gaddam,NK | en |
| dc.contributor.author | José Machado da Silva | en |
| dc.date.accessioned | 2017-12-22T17:16:14Z | |
| dc.date.available | 2017-12-22T17:16:14Z | |
| dc.date.issued | 2015 | en |
| dc.description.abstract | This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i.e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations. | en |
| dc.identifier.uri | http://repositorio.inesctec.pt/handle/123456789/4784 | |
| dc.identifier.uri | http://dx.doi.org/10.1109/dcis.2015.7388610 | en |
| dc.language | eng | en |
| dc.relation | 1600 | en |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.title | Design of a High Efficiency GaN-HEMT RF Power Amplifier | en |
| dc.type | conferenceObject | en |
| dc.type | Publication | en |
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