Please use this identifier to cite or link to this item: http://repositorio.inesctec.pt/handle/123456789/4784
Title: Design of a High Efficiency GaN-HEMT RF Power Amplifier
Authors: Gaddam,NK
José Machado da Silva
Issue Date: 2015
Abstract: This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i.e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.
URI: http://repositorio.inesctec.pt/handle/123456789/4784
http://dx.doi.org/10.1109/dcis.2015.7388610
metadata.dc.type: conferenceObject
Publication
Appears in Collections:CTM - Articles in International Conferences

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