Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films
Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films
| dc.contributor.author | Carvalho,TT | en |
| dc.contributor.author | Figueiras,FG | en |
| dc.contributor.author | Pereira,SMS | en |
| dc.contributor.author | José Ramiro Fernandes | en |
| dc.contributor.author | Perez de la Cruz,JP | en |
| dc.contributor.author | Tavares,PB | en |
| dc.contributor.author | Almeida,A | en |
| dc.contributor.author | Agostinho Moreira,JA | en |
| dc.date.accessioned | 2018-01-25T14:14:12Z | |
| dc.date.available | 2018-01-25T14:14:12Z | |
| dc.date.issued | 2017 | en |
| dc.description.abstract | The present work explores the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 (BLFM) thin films, grown by RF sputtering on platinum metalized silicon substrates, and its impact on the structural and ferroelectric properties. The optimized processing conditions were found to be a combination of deposition of an amorphous film at low substrate temperature (ae<currency>550 A degrees C), followed by a thermal treatment at 550 A degrees C during 30 min, in order to prevent bismuth volatilization. This procedure leads to the formation of high-quality monophasic crystalline films with well-defined piezoelectric response exhibiting micron size domains. | en |
| dc.identifier.uri | http://repositorio.inesctec.pt/handle/123456789/7363 | |
| dc.identifier.uri | http://dx.doi.org/10.1007/s10854-017-7094-0 | en |
| dc.language | eng | en |
| dc.relation | 3294 | en |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.title | Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films | en |
| dc.type | article | en |
| dc.type | Publication | en |
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