Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering

Abstract

Indium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n-